In-Sensor Polarimetric Optoelectronic Computing Based on Gate-Tunable 2D Photodetector
Author(s): Yu, YL (Yu, Yali); Deng, QR (Deng, Qunrui); Xin, KY (Xin, Kaiyao); Huo, NJ (Huo, Nengjie); Wei, ZM (Wei, Zhongming)
Source: IEEE ELECTRON DEVICE LETTERS Volume: 45 ?Issue: 4 ?Pages: 645-648 ?DOI: 10.1109/LED.2024.3362827 ?Published Date: 2024 APR ?
Abstract: High-precision image processing is an essential component in diverse applications. A significant challenge in current CMOS image sensors is the separation of front-end image capture from back-end image processing. The operational gap necessitates the transfer of data between the sensing and computing units, resulting in increased power consumption. Addressing this issue, the study focuses on the imperative need to integrate in-sensor computing approaches, reducing power consumption. In this work, a gate-tunable and polarization-sensitive photodetector was fabricated using a tungsten diselenide/molybdenum ditelluride van der Waals heterostructure. Benefiting from the gate-tunable and polarization-sensitive attributes of the photodetector, the research demonstrates the induction of optoelectronic reversal for both positive and negative values, which yields changeable polarized photocurrent for in-sensor computing. With programmed image filter kernels of 3 x 3, the device exhibits the capacity to undertake image processing tasks, including sharpen, box blur, and Sobel operations.
